NCERT Class 12 Physics Solutions Semiconductor Electronics Materials Devices and Simple Circuits

NCERT Solutions Semiconductor Electronics Materials Devices And Simple Circuits with answers available in Pdf for free download. The NCERT Solutions for Class 12 Physics with answers have been prepared as per the latest syllabus, NCERT books and examination pattern suggested in Standard 12 by CBSE, NCERT and KVS. Solutions to questions given in NCERT book for Class 12 Physics are an important part of exams for Grade 12 Physics and if practiced properly can help you to get higher marks. Refer to more Chapter-wise Solutions for NCERT Class 12 Physics and also download more latest study material for all subjects

Semiconductor Electronics Materials Devices And Simple Circuits Class 12 NCERT Solutions

Class 12 Physics students should refer to the following NCERT questions with answers for Semiconductor Electronics Materials Devices And Simple Circuits in standard 12. These NCERT Solutions with answers for Grade 12 Physics will come in exams and help you to score good marks

Semiconductor Electronics Materials Devices And Simple Circuits NCERT Solutions Class 12

Chapter 14 – Semiconductor Electronics Materials Devices And Simple Circuits

Question 14.1: In an n-type silicon, which of the following statement is true:

(a) Electrons are majority carriers and trivalent atoms are the dopants.

(b) Electrons are minority carriers and pentavalent atoms are the dopants.

(c) Holes are minority carriers and pentavalent atoms are the dopants.

(d) Holes are majority carriers and trivalent atoms are the dopants.

Answer The correct statement is (c).

In an n-type silicon, the electrons are the majority carriers, while the holes are the minority carriers. An n-type semiconductor is obtained when pentavalent atoms, such as phosphorus, are doped in silicon atoms.

Question 14.2: Which of the statements given in Exercise 14.1 is true for p-type semiconductors.

Answer :The correct statement is (d).

In a p-type semiconductor, the holes are the majority carriers, while the electrons arethe minority carriers. A p-type semiconductor is obtained when trivalent atoms, such as aluminium, are doped in silicon atoms.

Question 14.3: Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?

(a) (Eg)Si < (Eg)Ge < (Eg)C

(b) (Eg)C < (Eg)Ge > (Eg)Si

(c) (Eg)C > (Eg)Si > (Eg)Ge

(d) (Eg)C = (Eg)Si = (Eg)Ge

Answer :The correct statement is (c).

Of the three given elements, the energy band gap of carbon is the maximum and that of germanium is the least.

The energy band gap of these elements are related as: (Eg)C > (Eg)Si > (Eg)Ge

Question 14.4: In an unbiased p-n junction, holes diffuse from the p-region to n-region because

(a) free electrons in the n-region attract them.

(b) they move across the junction by the potential difference.

(c) hole concentration in p-region is more as compared to n-region.

(d) All the above.

Answer The correct statement is (c).

The diffusion of charge carriers across a junction takes place from the region of higher concentration to the region of lower concentration. In this case, the p-region has greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region.

Question 14.5: When a forward bias is applied to a p-n junction, it

(a) raises the potential barrier.

(b) reduces the majority carrier current to zero.

(c) lowers the potential barrier.

(d) None of the above.

Answer The correct statement is (c).

When a forward bias is applied to a p-n junction, it lowers the value of potential barrier. In the case of a forward bias, the potential barrier opposes the applied voltage. Hence, the potential barrier across the junction gets reduced.

Question 14.6: For transistor action, which of the following statements are correct:

(a) Base, emitter and collector regions should have similar size and doping concentrations.

(b) The base region must be very thin and lightly doped.

(c) The emitter junction is forward biased and collector junction is reverse biased.

(d) Both the emitter junction as well as the collector junction are forward biased.

Answer The correct statement is (b), (c).

For a transistor action, the junction must be lightly doped so that the base region is very thin. Also, the emitter junction must be forward-biased and collector junction should be reverse-biased.

Question 14.7: For a transistor amplifier, the voltage gain

(a) remains constant for all frequencies.

(b) is high at high and low frequencies and constant in the middle frequency range.

(c) is low at high and low frequencies and constant at mid frequencies.

(d) None of the above.

Answer The correct statement is (c).

The voltage gain of a transistor amplifier is constant at mid frequency range only. It is low at high and low frequencies.

Question 14.8: In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency.

Answer Input frequency = 50 Hz 

For a half-wave rectifier, the output frequency is equal to the input frequency. ˆOutput frequency = 50 Hz

For a full-wave rectifier, the output frequency is twice the input frequency. ˆOutput frequency = 2 ~ 50 = 100 Hz

Question 14.9: For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2k9 is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 k9.


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