CBSE Class 12 Physics Semiconductor Electronics Materials Devices and Simple Circuits MCQs Set 06

Practice MCQs for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

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Multiple Choice Questions

Question 1: Which of the following correctly orders the energy band gaps of diamond (C), silicon (Si) and germanium (Ge)?
(a) Eg(Si) > Eg(C) > Eg(Ge)
(b) Eg(Ge) > Eg(Si) > Eg(C)
(c) Eg(C) > Eg(Si) > Eg(Ge)
(d) Eg(C) = Eg(Si) = Eg(Ge)
Show Answer & Explanation

Answer: (c) Eg(C) > Eg(Si) > Eg(Ge)

Explanation:
1. Diamond: about 5.4 eV; silicon: about 1.1 eV; germanium: about 0.7 eV.
2. So the order is Eg(C) > Eg(Si) > Eg(Ge).

Teacher's Note:
1. All three have the same crystal structure, but the band gap falls as we go down group 14.
2. The large gap of diamond is why it is an insulator.

Question 2: A sample of pure silicon has ni = 1.5 × 1016 m−3. After doping, the electron concentration becomes 4.5 × 1022 m−3. The hole concentration now is
(a) 1.5 × 1016 m−3
(b) 5 × 109 m−3
(c) 3 × 106 m−3
(d) 4.5 × 1022 m−3
Show Answer & Explanation

Answer: (b) 5 × 109 m−3

Explanation:
1. Mass action relation: ne nh = ni2
2. nh = \( \frac{(1.5 \times 10^{16})^2}{4.5 \times 10^{22}} \) = \( \frac{2.25 \times 10^{32}}{4.5 \times 10^{22}} \)
3. nh = 5 × 109 m−3

Teacher's Note:
1. Doping raises the majority carriers and lowers the minority carriers below ni.
2. Square ni carefully: (1.5)² = 2.25 and (10¹⁶)² = 10³².

Question 3: A silicon crystal has 5 × 1028 atoms m−3. It is doped with arsenic at the rate of 1 atom per million silicon atoms. The concentration of donor atoms is
(a) 5 × 1022 m−3
(b) 5 × 1034 m−3
(c) 5 × 1028 m−3
(d) 5 × 1016 m−3
Show Answer & Explanation

Answer: (a) 5 × 1022 m−3

Explanation:
1. ND = \( \frac{5 \times 10^{28}}{10^{6}} \)
2. ND = 5 × 1022 m−3

Teacher's Note:
1. 1 part per million means divide by 10⁶, not multiply.
2. Each arsenic atom gives one free electron, so ne ≈ 5 × 10²² m⁻³ too.

Question 4: When the temperature of a pure germanium crystal is raised, its electrical resistance
(a) increases, as in metals
(b) stays the same
(c) first increases and then decreases
(d) decreases
Show Answer & Explanation

Answer: (d) decreases

Explanation:
1. Heating breaks more covalent bonds, so more electron–hole pairs are produced.
2. With more charge carriers the conductivity rises and the resistance decreases.

Teacher's Note:
1. Semiconductors have a negative temperature coefficient of resistance.
2. In metals the number of carriers is fixed, so extra collisions make resistance rise instead.

Question 5: In an n-type semiconductor, the donor energy level lies
(a) just above the top of the valence band
(b) just below the bottom of the conduction band
(c) exactly in the middle of the band gap
(d) inside the conduction band
Show Answer & Explanation

Answer: (b) just below the bottom of the conduction band

Explanation:
1. The fifth electron of the donor atom is very loosely bound (about 0.05 eV in Si).
2. So its level lies just below the bottom of the conduction band, and a small energy lifts it into the band.

Teacher's Note:
1. Acceptor levels, in contrast, lie just above the valence band.
2. This small gap is why almost all donors are ionised at room temperature.

Question 6: A p-type semiconductor as a whole is
(a) positively charged
(b) negatively charged
(c) electrically neutral
(d) positively charged only at high temperature
Show Answer & Explanation

Answer: (c) electrically neutral

Explanation:
1. Each trivalent atom that creates a hole becomes a fixed negative ion when it accepts an electron.
2. The total positive charge of the holes equals the total negative charge of the ions, so the crystal is electrically neutral.

Teacher's Note:
1. Do not confuse 'p' (majority carriers are holes) with a net positive charge.
2. Doping adds neutral atoms, so no net charge is added to the crystal.

Question 7: The depletion region of a p-n junction contains
(a) only immobile ions
(b) only free electrons
(c) only holes
(d) equal numbers of free electrons and holes
Show Answer & Explanation

Answer: (a) only immobile ions

Explanation:
1. Near the junction, electrons and holes diffuse across and recombine.
2. What is left is a layer of fixed donor and acceptor ions with no mobile carriers, so it has only immobile ions.

Teacher's Note:
1. 'Depletion' means depleted of mobile charge carriers.
2. The ions are fixed in the crystal lattice and cannot move.

Question 8: A silicon diode (cut-in voltage 0.7 V) is connected in forward bias in series with a 200 Ω resistor and a 5 V battery. The current in the circuit is
(a) 25 mA
(b) 3.5 mA
(c) 28.5 mA
(d) 21.5 mA
Show Answer & Explanation

Answer: (d) 21.5 mA

Explanation:
1. Voltage across the resistor = 5 − 0.7 = 4.3 V
2. I = \( \frac{4.3}{200} \) = 0.0215 A = 21.5 mA

Teacher's Note:
1. 25 mA is what you get if you forget the 0.7 V drop across the diode.
2. Treat the forward-biased diode as a fixed 0.7 V drop for such problems.

Question 9: When the forward voltage across a diode is raised from 0.70 V to 0.75 V, the current rises from 10 mA to 20 mA. The dynamic resistance of the diode in this range is
(a) 0.5 Ω
(b) 5 Ω
(c) 50 Ω
(d) 75 Ω
Show Answer & Explanation

Answer: (b) 5 Ω

Explanation:
1. rd = \( \frac{\Delta V}{\Delta I} \) = \( \frac{0.75 - 0.70}{(20 - 10) \times 10^{-3}} \)
2. rd = \( \frac{0.05}{0.01} \) = 5 Ω

Teacher's Note:
1. Use changes in V and I, not V/I at one point.
2. Convert mA to A before dividing.

Question 10: When a p-n junction is reverse biased,
(a) the depletion region widens and the barrier height increases
(b) the depletion region narrows and the barrier height decreases
(c) the depletion region widens and the barrier height decreases
(d) the depletion region and barrier remain unchanged
Show Answer & Explanation

Answer: (a) the depletion region widens and the barrier height increases

Explanation:
1. In reverse bias the applied voltage adds to the barrier, so the effective barrier becomes V0 + V.
2. More carriers are pulled away from the junction, so the depletion region widens and the barrier height increases.

Teacher's Note:
1. Forward bias does exactly the opposite.
2. This is why a reverse-biased diode allows only a tiny current.

Question 11: In a half-wave rectifier, the diode conducts
(a) during both half cycles of the input
(b) only when the input voltage is zero
(c) during the half cycle in which its anode is positive with respect to its cathode
(d) during the half cycle in which its anode is negative
Show Answer & Explanation

Answer: (c) during the half cycle in which its anode is positive with respect to its cathode

Explanation:
1. A diode conducts only when it is forward biased, i.e. its p-side (anode) is at a higher potential.
2. So it conducts during the half cycle in which its anode is positive, and output appears only in that half.

Teacher's Note:
1. In the other half the diode is reverse biased and acts as an open switch.
2. Its output frequency is the same as the input frequency.

Question 12: In the circuit shown, both diodes are ideal. The current drawn from the 6 V battery is
+ − 6 V D 1 3 Ω D 2 6 Ω (a) 3 A
(b) 2 A
(c) 1 A
(d) 0.67 A
Show Answer & Explanation

Answer: (b) 2 A

Explanation:
1. D1 points from the + rail to the − rail, so it is forward biased and acts as a closed switch.
2. D2 points the other way, so it is reverse biased and its branch carries no current.
3. I = \( \frac{6}{3} \) = 2 A

Teacher's Note:
1. 3 A would be the answer only if both branches conducted.
2. For ideal diodes, first decide which are forward biased, then remove the others from the circuit.

Question 13: A capacitor is connected across the load resistance in a rectifier circuit in order to
(a) increase the frequency of the output
(b) convert dc back into ac
(c) protect the diode from breakdown
(d) reduce the ripple and give a smoother dc output
Show Answer & Explanation

Answer: (d) reduce the ripple and give a smoother dc output

Explanation:
1. The capacitor charges as the output rises and slowly discharges through RL as it falls.
2. This fills the gaps between pulses, so it reduces the ripple and gives a smoother dc output.

Teacher's Note:
1. A large C RL makes the output steadier.
2. This arrangement is called a capacitor filter.

Assertion–Reason Questions

Question 14:
Assertion (A): Holes act as positive charge carriers in a semiconductor.
Reason (R): When an electron from a neighbouring bond fills a hole, the hole effectively moves in the opposite direction to that electron.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (a) Both A and R are true, and R is the correct explanation of A.

Explanation:
1. A hole is a vacancy with an effective charge +e and it does carry current. The Assertion is true.
2. Bound electrons jumping into vacancies make the vacancy move the opposite way, like a positive charge. The Reason is true.
3. The Reason explains how holes conduct, so it is the correct explanation.

Teacher's Note:
1. Hole current is really a movement of bound valence electrons.
2. Free electrons move in the conduction band; holes move in the valence band.

Question 15:
Assertion (A): Pure silicon behaves as an insulator at 0 K.
Reason (R): At 0 K the valence band of silicon is completely filled and its conduction band is empty.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (a) Both A and R are true, and R is the correct explanation of A.

Explanation:
1. At 0 K there is no thermal energy to lift electrons across the 1.1 eV gap. The Assertion is true.
2. So the valence band is full and the conduction band is empty. The Reason is true.
3. With no free carriers there can be no current, so the Reason explains the Assertion.

Teacher's Note:
1. A full band cannot conduct, and neither can an empty one.
2. Conductivity appears only as the temperature rises.

Question 16:
Assertion (A): An n-type semiconductor carries a net negative charge.
Reason (R): The majority charge carriers in an n-type semiconductor are electrons.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (d) A is false, but R is true.

Explanation:
1. The free electrons are balanced by fixed positive donor ions, so the crystal is neutral. The Assertion is false.
2. Electrons are indeed the majority carriers in n-type material. The Reason is true.

Teacher's Note:
1. 'n' refers to the type of majority carrier, not to the net charge.
2. Doping adds neutral atoms, so the total charge stays zero.

Question 17:
Assertion (A): A p-n junction diode offers low resistance when forward biased.
Reason (R): In forward bias the depletion region of the junction becomes wider.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (c) A is true, but R is false.

Explanation:
1. In forward bias the barrier falls to V0 − V and a large current flows, so the resistance is low. The Assertion is true.
2. In forward bias the depletion region becomes narrower, not wider. The Reason is false.

Teacher's Note:
1. A wider depletion region happens in reverse bias.
2. Low resistance goes with a thin depletion layer.

Question 18:
Assertion (A): A p-n junction diode does not obey Ohm's law.
Reason (R): The V–I characteristic of a diode is not a straight line through the origin.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (a) Both A and R are true, and R is the correct explanation of A.

Explanation:
1. The current through a diode does not increase in proportion to the voltage. The Assertion is true.
2. Its V–I curve is non-linear and differs for forward and reverse bias. The Reason is true.
3. A non-linear V–I graph is exactly what failing to obey Ohm's law means, so the Reason explains the Assertion.

Teacher's Note:
1. Because the graph is curved, we use dynamic resistance ΔV/ΔI.
2. A device that obeys Ohm's law has a straight-line V–I graph.

Question 19:
Assertion (A): In a centre-tap full-wave rectifier, output is obtained during both half cycles of the input.
Reason (R): A capacitor filter reduces the ripple in a rectified output.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation

Answer: (b) Both A and R are true, but R is not the correct explanation of A.

Explanation:
1. One diode conducts in each half cycle, both sending current through RL in the same direction. The Assertion is true.
2. A capacitor across the load smooths the output, so the Reason is true.
3. Output in both halves is due to the two diodes, not the capacitor, so the Reason does not explain the Assertion.

Teacher's Note:
1. The full-wave output works even without any filter.
2. Choose (b) when both statements are true but unrelated.

Case Based Questions

Case Study 1: In a school laboratory, a student studies a silicon p-n junction diode. Connecting it in forward bias, she raises the voltage in steps and records the current, as in the table below. She then reverses the diode and finds that, up to −10 V, the current stays at about 1 μA and hardly changes with voltage.
Forward voltage (V)0.50.60.70.8
Forward current (mA)0.121030
Question 20 (i): The dynamic resistance of the diode between 0.7 V and 0.8 V is
(a) 5 Ω
(b) 50 Ω
(c) 27 Ω
(d) 0.2 Ω
Show Answer & Explanation

Answer: (a) 5 Ω

Explanation:
1. rd = \( \frac{\Delta V}{\Delta I} \) = \( \frac{0.8 - 0.7}{(30 - 10) \times 10^{-3}} \)
2. rd = \( \frac{0.1}{0.02} \) = 5 Ω

Teacher's Note:
1. 27 Ω comes from wrongly using V/I = 0.8/0.030 at one point.
2. Dynamic resistance falls as the forward current increases.

Question 20 (ii): From the table, the cut-in (knee) voltage of this diode is about
(a) 0.1 V
(b) 0.3 V
(c) 0.7 V
(d) 10 V
Show Answer & Explanation

Answer: (c) 0.7 V

Explanation:
1. Below about 0.6 V the current is tiny; it starts rising sharply from about 0.7 V.
2. So the knee voltage is about 0.7 V, as expected for silicon.

Teacher's Note:
1. For germanium the knee voltage is lower, about 0.2–0.3 V.
2. The knee is where the curve turns from flat to steep.

Question 20 (iii): The small, nearly constant current of about 1 μA in reverse bias is due to
(a) diffusion of majority carriers
(b) drift of minority carriers across the junction
(c) breakdown of the junction
(d) heating of the connecting wires
Show Answer & Explanation

Answer: (b) drift of minority carriers across the junction

Explanation:
1. In reverse bias the higher barrier stops majority carrier diffusion.
2. Only the few minority carriers are swept across by the junction field, so the current is due to drift of minority carriers.

Teacher's Note:
1. The number of minority carriers depends on temperature, not on the applied voltage.
2. That is why this current hardly changes with voltage.

Question 20 (iv): The diode is now connected in forward bias with a 65 Ω resistor and a 2 V cell. Taking the diode drop as 0.7 V, the current is
(a) 30.8 mA
(b) 10 mA
(c) 1.3 mA
(d) 20 mA
Show Answer & Explanation

Answer: (d) 20 mA

Explanation:
1. Voltage across the resistor = 2 − 0.7 = 1.3 V
2. I = \( \frac{1.3}{65} \) = 0.02 A = 20 mA

Teacher's Note:
1. 30.8 mA comes from ignoring the diode drop.
2. Always subtract the diode's forward drop from the supply voltage first.

Question 20 (iv) OR: If the diode in the circuit of part (iv) is reversed, the current becomes
(a) about 1 μA, practically zero
(b) 20 mA in the opposite direction
(c) 30.8 mA
(d) very large, as the diode breaks down
Show Answer & Explanation

Answer: (a) about 1 μA, practically zero

Explanation:
1. The diode is now reverse biased by only 2 V, far below breakdown.
2. Only the reverse saturation current of about 1 μA flows, which is practically zero.

Teacher's Note:
1. A diode in reverse bias behaves almost as an open switch.
2. Breakdown needs a much larger reverse voltage.

Case Study 2: A mobile phone charger converts the 230 V, 50 Hz mains supply into low-voltage dc. A step-down transformer with a centre-tapped secondary feeds two diodes D1 and D2, connected to the ends A and B of the secondary, to form a full-wave rectifier. The load is connected between the joined outputs of the diodes and the centre tap C. A large capacitor across the load smooths the output.

Question 21 (i): The frequency of the rectified output (before filtering) is
(a) 25 Hz
(b) 50 Hz
(c) 100 Hz
(d) 200 Hz
Show Answer & Explanation

Answer: (c) 100 Hz

Explanation:
1. In a full-wave rectifier there is one output pulse in each half cycle.
2. Output frequency = 2 × 50 = 100 Hz

Teacher's Note:
1. A half-wave rectifier would give 50 Hz.
2. More pulses per second make the output easier to smooth.

Question 21 (ii): During the half cycle in which end A is positive with respect to C,
(a) both D1 and D2 conduct
(b) D2 conducts and D1 does not
(c) neither diode conducts
(d) D1 conducts and D2 does not
Show Answer & Explanation

Answer: (d) D1 conducts and D2 does not

Explanation:
1. When A is positive with respect to C, D1 is forward biased.
2. At the same time B is negative with respect to C, so D2 is reverse biased.
3. So D1 conducts and D2 does not.

Teacher's Note:
1. In the next half cycle the roles of the diodes swap.
2. In both cases the current through the load is in the same direction.

Question 21 (iii): If diode D2 burns out and becomes an open circuit, the circuit will
(a) work as a half-wave rectifier with output frequency 50 Hz
(b) give no output at all
(c) still work as a full-wave rectifier
(d) give ac output at 50 Hz
Show Answer & Explanation

Answer: (a) work as a half-wave rectifier with output frequency 50 Hz

Explanation:
1. D1 still conducts in the half cycles when A is positive.
2. No current flows in the other half cycles, so the circuit becomes a half-wave rectifier with output frequency 50 Hz.

Teacher's Note:
1. The output is still unidirectional, just with gaps.
2. The output is not ac, because current still flows only one way through the load.

Question 21 (iv): For the capacitor to smooth the output well, the time constant C RL should be
(a) much smaller than the time between output peaks
(b) equal to zero
(c) much larger than the time between output peaks
(d) equal to the period of the mains supply
Show Answer & Explanation

Answer: (c) much larger than the time between output peaks

Explanation:
1. Between peaks the capacitor discharges through RL.
2. If C RL is much larger than the time between peaks, the voltage falls very little before the next peak recharges it.

Teacher's Note:
1. A small time constant lets the capacitor discharge almost fully, leaving large ripple.
2. This is why chargers use capacitors of large capacitance.

Question 21 (iv) OR: The time interval between two successive peaks of the rectified output is
(a) 20 ms
(b) 10 ms
(c) 5 ms
(d) 50 ms
Show Answer & Explanation

Answer: (b) 10 ms

Explanation:
1. Output frequency = 100 Hz, so the time between peaks = \( \frac{1}{100} \) s
2. Time interval = 10 ms

Teacher's Note:
1. 20 ms is the period of the 50 Hz input, which applies to a half-wave rectifier.
2. Time = 1/frequency.

Practice MCQs for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

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