Here is the CBSE Class 12 Physics Electronic Devices Notes Set 02 for your studies. Use these Class 12 Physics revision notes, created by professional educators for the 2026-27 academic term. They make difficult ideas very easy to understand and focus on core definitions, helping Class 12 students prepare quickly before exams.
Concept Summary for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits
Every Class 12 Physics student can review these Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits notes to grasp main concepts quickly. The exam-friendly summaries highlight hard sections and high-scoring areas to make school assessments and final tests much easier.
Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Concept Notes
9. ELECTRONIC DEVICES
GIST
1. In metals, the conduction band and valence band partly overlap each other and there is no forbidden energy gap.
2. In insulators, the conduction band is empty and valence band is completely filled and forbidden gap is quite large = 6 eV. No electron from valence band can cross over to conduction band at room temperature, even if electric field is applied. Hence there is no conductivity of the insulators.
3. In semiconductors, the conduction band is empty and valence band is totally filled. But the forbidden gap between conduction band and valence band is quite small, which is about 1 eV. No electron from valence band can cross over to conduction band. Therefore, the semiconductor behaves as insulator. At room temperature, some electrons in the valence band acquire thermal energy, greater than energy gap of 1 eV and jump over to the conduction band where they are free to move under the influence of even a small electric field. Due
P-n junction diode
Two important processes occur during the formation of p-n junction diffusion and drift. The motion of majority charge carriers give rise to diffusion current.
Due to the space charge on n-side junction and negative space charge region on p-side the electric field is set up and potential barrier develops at the junction electric field e- on p-side moves to n and holes from n-side to p-side which is called drift current.
In equilibrium state, there is no current across p-n junction and potential barrier across p-n junction has maximum value.
The width of the depletion region and magnitude of barrier potential depends on the nature of semiconductor and doping concentration on two sides of p-n junction.
Forward Bias
P-n junction is FB when p-type connected to the +ve of battery and n-type connected to –ve battery Potential barrier is reduced and width of depletion layer decreases.
Reverse Bias
P-n junction in RB p-type connected to the –ve battery and n-type connected to +ve Resistance of p-n junction is high to the flow of current.
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Key Concepts & Summary for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits
Access these Revision Notes for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits to review core concepts swiftly. Built according to the active CBSE curriculum for Class 12, these notes support steady daily study. Experienced teachers recommend regular review of these summaries to master high-yield topics frequently tested in school evaluations.
NCERT-Aligned Revision Notes for Class 12 Physics
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Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Complete Revision and Practice
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