JEE Physics Semiconductor Electronics MCQs Set 19

Download JEE MCQs for JEE Physics: Semiconductor Electronics

Access targeted multiple-choice questions for Semiconductor Electronics designed to align with the latest JEE academic syllabus for JEE Physics. These objective practice sets help students evaluate their conceptual understanding and improve exam readiness.

Chapter-wise Objective Questions: Semiconductor Electronics

View or download the dedicated Semiconductor Electronics MCQ resource below. Practicing these 50 objective questions regularly builds familiarity with standard exam patterns and helps secure higher marks in final Physics evaluations.

Multiple Choice Questions

Question 1: The contact (barrier) potential at a P-N junction is:
(a) positive on the P side and negative on the N side
(b) zero
(c) negative on the P side and positive on the N side
(d) infinite
Show Answer & Explanation

Answer: (c) negative on the P side and positive on the N side

Explanation:
1. The P side loses holes and gains negative acceptor ions; the N side loses electrons and gains positive donor ions.

Teacher's Note:
1. The field points from N to P and opposes further diffusion.
2. Compare with the corresponding statement for the other kind of semiconductor or junction to avoid mixing them up.

Question 2: The barrier potential in a P-N junction is maximum in:
(a) forward bias
(b) reverse bias
(c) zero bias
(d) the condition when the diode is used as a rectifier in forward direction
Show Answer & Explanation

Answer: (b) reverse bias

Explanation:
1. Reverse bias adds to the built-in potential, widening the depletion region and raising the barrier.

Teacher's Note:
1. Forward bias lowers the barrier.
2. Questions of this kind are asked directly in JEE Main, so keep the key fact at your fingertips.

Question 3: The drift current in a P-N junction flows:
(a) from the N-side to the P-side
(b) from the P-side to the N-side
(c) from the N-side to the P-side if forward biased and reversed if reverse biased
(d) from the P-side to the N-side only if forward biased
Show Answer & Explanation

Answer: (a) from the N-side to the P-side

Explanation:
1. The junction field points from N to P and drives minority carriers, so the drift (conventional) current flows from n to p.

Teacher's Note:
1. It is opposite to the diffusion current.
2. Link the answer to the physical picture of carriers and junctions rather than memorising it as a bare fact.

Question 4: In a reverse biased P-N junction:
(a) the P region is positive and the current is due to electrons
(b) the P region is positive and the current is due to holes
(c) the P region is negative and the current is due to electrons only
(d) the P region is negative (connected to the negative terminal) and the current is due to both electrons and holes (minority carriers)
Show Answer & Explanation

Answer: (d) the P region is negative (connected to the negative terminal) and the current is due to both electrons and holes (minority carriers)

Explanation:
1. Reverse bias connects the p side to the negative terminal. The tiny current is carried by minority electrons in p and minority holes in n.

Teacher's Note:
1. Reverse current is of the order of microamperes.
2. A quick sketch of the band diagram or the circuit makes this type of question easy.

Question 5: The barrier potential of a P-N junction in germanium is:
(a) 0.03 V in the direction of the forward current
(b) 25 V opposing the forward current
(c) 0.3 V, opposing the forward current
(d) 25 V in the direction of the forward current
Show Answer & Explanation

Answer: (c) 0.3 V, opposing the forward current

Explanation:
1. Ge has a barrier of about 0.3 V and Si about 0.7 V. The barrier opposes the flow of majority carriers, i.e. the forward current.

Teacher's Note:
1. Remember Ge: 0.3 V, Si: 0.7 V.
2. Check units and orders of magnitude before choosing an option.

Question 6: A two-terminal device conducts when its ends are connected one way to a battery but not when the connections are interchanged. The device is a:
(a) transistor
(b) P-N junction
(c) triode
(d) resistor
Show Answer & Explanation

Answer: (b) P-N junction

Explanation:
1. Conduction in only one direction is the defining property of a junction diode (forward and reverse bias).

Teacher's Note:
1. A transistor has three terminals and a resistor conducts both ways.
2. Questions of this kind are asked directly in JEE Main, so keep the key fact at your fingertips.

Question 7: The potential barrier of a junction diode opposes:
(a) the majority carriers
(b) the minority carriers in both regions only
(c) electrons in the N region only
(d) holes in the P region only
Show Answer & Explanation

Answer: (a) the majority carriers

Explanation:
1. The barrier prevents majority holes and electrons from crossing; minority carriers are helped across by the same field.

Teacher's Note:
1. It opposes both electrons in n and holes in p, i.e. the majority carriers.
2. Eliminate the options that contradict a basic property of the device, then check the remaining one.

Question 8: A P-N junction diode behaves as an insulator when connected:
(a) in forward bias
(b) to an a.c. source
(c) to a d.c. source in either direction
(d) in reverse bias
Show Answer & Explanation

Answer: (d) in reverse bias

Explanation:
1. In reverse bias the depletion region widens and only a tiny leakage current flows, so the diode behaves like an open circuit.

Teacher's Note:
1. In forward bias it conducts after the knee voltage.
2. Link the answer to the physical picture of carriers and junctions rather than memorising it as a bare fact.

Question 9: The resistance of a reverse biased P-N junction diode is of the order of:
(a) \( 1\ \Omega \)
(b) \( 10^{2}\ \Omega \)
(c) \( 10^{6}\ \Omega \)
(d) \( 10^{3}\ \Omega \)
Show Answer & Explanation

Answer: (c) \( 10^{6}\ \Omega \)

Explanation:
1. The reverse current is only microamperes, so the resistance is of the order of mega-ohms.

Teacher's Note:
1. Forward resistance is only a few ohms to hundreds of ohms.
2. Check units and orders of magnitude before choosing an option.

Question 10: The avalanche breakdown in a P-N junction is due to:
(a) shift of the Fermi level
(b) the cumulative effect of collisions of conduction-band electrons (carrier multiplication)
(c) widening of the forbidden gap
(d) low impurity concentration
Show Answer & Explanation

Answer: (b) the cumulative effect of collisions of conduction-band electrons (carrier multiplication)

Explanation:
1. At high reverse voltage the carriers gain enough energy to knock out more electrons from bonds, which in turn do the same, and the current multiplies like an avalanche.

Teacher's Note:
1. Zener breakdown occurs in heavily doped junctions with a strong field.
2. Compare with the corresponding statement for the other kind of semiconductor or junction to avoid mixing them up.

Question 11: If the two ends of a P-N junction are joined by a wire:
(a) there will be no steady current in the circuit
(b) there will be a steady current from N to P
(c) there will be a steady current from P to N
(d) there may or may not be a current depending on the resistance of the wire
Show Answer & Explanation

Answer: (a) there will be no steady current in the circuit

Explanation:
1. No energy source is present; the contact potentials at the metal junctions cancel the junction potential, so the net emf around the loop is zero.

Teacher's Note:
1. A steady current without an energy source would violate energy conservation.
2. Questions of this kind are asked directly in JEE Main, so keep the key fact at your fingertips.

Question 12: Two junction diodes, one of germanium and one of silicon, are connected in parallel (both forward) to a 12 V battery and a 10 kΩ load. The germanium diode conducts at 0.3 V and the silicon diode at 0.7 V. The potential of the terminal Y (the load end) when a current flows is:
(a) 12 V
(b) 11 V
(c) 11.3 V
(d) 11.7 V
Show Answer & Explanation

Answer: (d) 11.7 V

Explanation:
1. Ge starts conducting first at 0.3 V and holds the voltage drop across the parallel pair at 0.3 V, so Si never conducts.
2. \( V_Y=12-0.3=11.7\ \text{V} \).

Teacher's Note:
1. Two diodes in parallel: the one with the lower knee voltage clamps the voltage.
2. Link the answer to the physical picture of carriers and junctions rather than memorising it as a bare fact.

Question 13: The conductivity of a photodiode changes only when the wavelength of the incident light is less than 620 nm. The band gap of the diode is:
(a) 0.75 eV
(b) 1.1 eV
(c) 2.0 eV
(d) 1.5 eV
Show Answer & Explanation

Answer: (c) 2.0 eV

Explanation:
1. \( E_g=\frac{hc}{\lambda}=\frac{1240\ \text{eV nm}}{620\ \text{nm}}=2.0\ \text{eV} \)

Teacher's Note:
1. The threshold wavelength corresponds to a photon energy equal to the gap.
2. A quick sketch of the band diagram or the circuit makes this type of question easy.

Question 14: If the forward voltage of a semiconductor diode is changed from 0.5 V to 2 V, the forward current changes by 1.5 mA. The forward (dynamic) resistance of the diode is:
(a) 2 kΩ
(b) 1 kΩ
(c) 4 kΩ
(d) 8 kΩ
Show Answer & Explanation

Answer: (b) 1 kΩ

Explanation:
1. \( r=\frac{\Delta V}{\Delta I}=\frac{1.5}{1.5\times10^{-3}}=10^{3}\ \Omega \)

Teacher's Note:
1. Dynamic resistance is the ratio of the change in voltage to the change in current.
2. Check units and orders of magnitude before choosing an option.

Question 15: If the input alternating voltage of a full-wave rectifier has frequency n, the ripple frequency of the output is:
(a) 2n
(b) n
(c) n/2
(d) n/4
Show Answer & Explanation

Answer: (a) 2n

Explanation:
1. A full-wave rectifier turns both half cycles into pulses of the same polarity, so there are two output pulses per input cycle.

Teacher's Note:
1. A half-wave rectifier would have ripple frequency n.
2. Questions of this kind are asked directly in JEE Main, so keep the key fact at your fingertips.

Question 16: A 10 V battery is connected through a 500 Ω resistor to a 5 V zener diode in parallel with a 1 kΩ load. The current through the zener diode is:
(a) 20 mA
(b) 25 mA
(c) 15 mA
(d) 5 mA
Show Answer & Explanation

Answer: (d) 5 mA

Explanation:
1. Voltage across the 500 Ω resistor is 10 − 5 = 5 V, so the total current is \( I=5/500=10\ \text{mA} \).
2. Load current is \( 5/1000=5\ \text{mA} \), so the zener current is \( 10-5=5\ \text{mA} \).

Teacher's Note:
1. The zener holds 5 V across the load, so the load current is fixed and the rest flows through the zener.
2. Eliminate the options that contradict a basic property of the device, then check the remaining one.

Question 17: The function of a rectifier is to:
(a) convert d.c. into a.c.
(b) do both of the above
(c) convert a.c. into d.c.
(d) amplify a weak signal
Show Answer & Explanation

Answer: (c) convert a.c. into d.c.

Explanation:
1. A rectifier uses the one-way conduction of diodes to change alternating current into unidirectional current.

Teacher's Note:
1. An inverter does the opposite.
2. Link the answer to the physical picture of carriers and junctions rather than memorising it as a bare fact.

Question 18: The I-V characteristic of a silicon diode is drawn with the forward and reverse regions on one graph. Statement I: the region on the negative-voltage side of the origin corresponds to reverse bias. Statement II: the knee of the forward curve is at about 0.2 V. Statement III: different scales are used for the positive and negative current axes. Which statements are correct?
(a) Only statement I
(b) Only statements I and III
(c) Only statements I and II
(d) All of I, II and III
Show Answer & Explanation

Answer: (b) Only statements I and III

Explanation:
1. Statement I is true: negative voltage means reverse bias.
2. Statement II is false: the knee of a silicon diode is at about 0.7 V.
3. Statement III is true: reverse current is in microamperes while forward current is in milliamperes, so the two parts are drawn to different scales.

Teacher's Note:
1. Silicon knee voltage is 0.7 V and germanium 0.3 V.
2. Check units and orders of magnitude before choosing an option.

Question 19: In a transistor, the region with the least impurity concentration (lightest doping) is:
(a) the base
(b) the emitter
(c) the collector
(d) all three regions have equal doping
Show Answer & Explanation

Answer: (a) the base

Explanation:
1. The emitter is heavily doped to supply carriers, the collector is moderately doped and the base is lightly doped and thin.

Teacher's Note:
1. This keeps recombination in the base small.
2. Compare with the corresponding statement for the other kind of semiconductor or junction to avoid mixing them up.

Question 20: The thinnest part of a transistor is:
(a) the emitter
(b) the collector
(c) it depends on the transistor
(d) the base
Show Answer & Explanation

Answer: (d) the base

Explanation:
1. A thin base lets most carriers cross to the collector without recombining.

Teacher's Note:
1. Typical base width is a few micrometres.
2. Questions of this kind are asked directly in JEE Main, so keep the key fact at your fingertips.

Question 21: In normal (active-region) operation of a transistor:
(a) both junctions are forward biased
(b) both junctions are reverse biased
(c) the base-emitter junction is forward biased and the base-collector junction is reverse biased
(d) the base-emitter junction is reverse biased and the base-collector junction is forward biased
Show Answer & Explanation

Answer: (c) the base-emitter junction is forward biased and the base-collector junction is reverse biased

Explanation:
1. Forward bias at the emitter-base junction injects carriers into the base; reverse bias at the collector-base junction sweeps them into the collector.

Teacher's Note:
1. This is the condition for amplification.
2. Link the answer to the physical picture of carriers and junctions rather than memorising it as a bare fact.

Question 22: In a properly biased transistor:
(a) both depletion layers are equally large
(b) the emitter-base depletion layer is thin (small) but the base-collector depletion layer is wide (large)
(c) both depletion layers are equally small
(d) the emitter-base depletion layer is large and the base-collector depletion layer is small
Show Answer & Explanation

Answer: (b) the emitter-base depletion layer is thin (small) but the base-collector depletion layer is wide (large)

Explanation:
1. Forward bias narrows the emitter-base depletion layer and reverse bias widens the collector-base one.

Teacher's Note:
1. Wide collector-base layer supports the large reverse voltage.
2. A quick sketch of the band diagram or the circuit makes this type of question easy.

Download Chapter MCQs: JEE Physics Semiconductor Electronics

Download Multiple Choice Questions: Semiconductor Electronics (JEE Physics)

Test your conceptual understanding of Semiconductor Electronics with these targeted multiple-choice questions. Designed in alignment with the latest JEE curriculum for JEE Physics, these problem sets build accuracy and prepare students for objective exams.

Concept Clarification for Semiconductor Electronics

Cross-reference your completed choices with comprehensive NCERT solutions for JEE Physics to ensure absolute clarity across all sub-topics in this chapter.

Additional Study Resources for JEE Physics

Explore our broader library of printable assignments, chapter notes, and mock tests designed to support continuous revision and secure higher marks in JEE assessments.

FAQs

Where can I access latest JEE Physics Semiconductor Electronics MCQs Set 19?

You can get most exhaustive JEE Physics Semiconductor Electronics MCQs Set 19 for free on StudiesToday.com. These MCQs for JEE Physics are updated for the 2026-27 academic session as per JEE examination standards.

Are Assertion-Reasoning and Case-Study MCQs included in the Physics JEE material?

Yes, our JEE Physics Semiconductor Electronics MCQs Set 19 include the latest type of questions, such as Assertion-Reasoning and Case-based MCQs. 50% of the JEE paper is now competency-based.

How do practicing Physics MCQs help in scoring full marks in JEE exams?

By solving our JEE Physics Semiconductor Electronics MCQs Set 19, JEE students can improve their accuracy and speed which is important as objective questions provide a chance to secure 100% marks in the Physics.

Do you provide answers and explanations for JEE Physics Semiconductor Electronics MCQs Set 19?

Yes, Physics MCQs for JEE have answer key and brief explanations to help students understand logic behind the correct option as its important for 2026 competency-focused JEE exams.

Can I practice these Physics JEE MCQs online?

Yes, you can also access online interactive tests for JEE Physics Semiconductor Electronics MCQs Set 19 on StudiesToday.com as they provide instant answers and score to help you track your progress in Physics.