Physics Objective Questions and Answers: Semiconductor Electronics
Access targeted multiple-choice questions for Semiconductor Electronics designed to align with the latest JEE academic syllabus for JEE Physics. These objective practice sets help students evaluate their conceptual understanding and improve exam readiness.
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Multiple Choice Questions
Assertion (A): Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason (R): The current in forward bias is more than the current in reverse bias for a p-n junction diode.
(a) Both A and R are true, and R is the correct explanation of A.
(b) Both A and R are true, but R is not the correct explanation of A.
(c) A is true, but R is false.
(d) A is false, but R is true.
Show Answer & Explanation
Answer: (b) Both A and R are true, but R is not the correct explanation of A.
Explanation:
1. In reverse bias the dark current is tiny, so the extra current produced by light is a large fractional change and is easily measured: A is true.
2. R is also true (forward current is much larger), but it does not explain why photodiodes are used in reverse bias.
Teacher's Note:
1. Photodiodes work best when the dark current is very small.
2. A forward-biased diode carries a large current irrespective of illumination.
For a p-n junction diode, at an applied voltage V the current in forward bias is more than the current in reverse bias for \( |V_z|>\pm V\ge|V_0| \), where \( V_0 \) is the threshold voltage and \( V_z \) the breakdown voltage. (Reason R)
Choose the correct answer:
(a) Both A and R are true and R is the correct explanation of A
(b) Both A and R are true but R is not the correct explanation of A
(c) A is false but R is true
(d) A is true but R is false
Show Answer & Explanation
Answer: (c) A is false but R is true
Explanation:
1. Photodiodes are operated in reverse bias to measure light intensity, so A is false.
2. R is true: beyond the threshold voltage (and below breakdown) forward current is far greater than reverse current.
Teacher's Note:
1. The fractional change in reverse current under illumination is large.
2. Forward current is dominated by diffusion and hides the photocurrent.
Statement II: When such p-type and n-type semiconductors are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
Choose the most appropriate answer:
(a) Both Statement I and Statement II are incorrect
(b) Statement I is incorrect but Statement II is correct
(c) Both Statement I and Statement II are correct
(d) Statement I is correct but Statement II is incorrect
Show Answer & Explanation
Answer: (d) Statement I is correct but Statement II is incorrect
Explanation:
1. Statement I is correct: boron (trivalent) gives p-type, arsenic (pentavalent) gives n-type.
2. Statement II is incorrect: at equilibrium the diffusion and drift currents cancel, so no net current flows and none is detected by an ammeter.
Teacher's Note:
1. In equilibrium the junction has a built-in potential but zero net current.
2. A real current needs an external source.
A. It is a heavily doped p-n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
(a) C and D
(b) A
(c) C
(d) B
Show Answer & Explanation
Answer: (c) C
Explanation:
1. A, B and D are true statements about an LED.
2. C is false: an LED emits light only in forward bias.
Teacher's Note:
1. Light is emitted when electrons and holes recombine across the junction, which requires forward bias.
2. Photodiodes (not LEDs) are used in reverse bias.
(a) a NOR gate
(b) an XOR gate
(c) an AND gate
(d) an XNOR gate
Show Answer & Explanation
Answer: (b) an XOR gate
Explanation:
1. \( X=A\overline B+\overline AB \).
2. This is 1 only when the inputs differ, which is the XOR function \( A\oplus B \).
Teacher's Note:
1. Make the truth table: (0,0)=0, (0,1)=1, (1,0)=1, (1,1)=0.
2. The XOR gate is the 'exclusive OR'.
(a) 00:1, 01:1, 10:1, 11:0
(b) 00:1, 01:0, 10:0, 11:1
(c) 00:0, 01:1, 10:1, 11:1
(d) 00:0, 01:1, 10:1, 11:0
Show Answer & Explanation
Answer: (d) 00:0, 01:1, 10:1, 11:0
Explanation:
1. \( P=\overline{AB} \). Gate 2 gives \( \overline{AP} \) and gate 3 gives \( \overline{PB} \).
2. \( Y=\overline{\overline{AP}\cdot\overline{PB}}=AP+PB=P(A+B)=\overline{AB}(A+B) \).
3. This equals 1 when exactly one input is 1: (0,0) gives 0, (0,1) gives 1, (1,0) gives 1, (1,1) gives 0 (XOR).
Teacher's Note:
1. Work out the intermediate outputs for each input pair.
2. Four NANDs connected this way are the standard XOR construction.
(a) Both n_e and resistance decrease
(b) Both n_e and resistance increase
(c) n_e increases and resistance decreases
(d) n_e decreases and resistance increases
Show Answer & Explanation
Answer: (c) n_e increases and resistance decreases
Explanation:
1. Heating breaks more covalent bonds, so more electrons reach the conduction band.
2. More charge carriers mean lower resistance, so a semiconductor has a negative temperature coefficient of resistance.
Teacher's Note:
1. Metals show the opposite trend because collisions increase.
2. Carrier density rises exponentially with temperature in a semiconductor.
Statement II: In a transistor, the collector is the thickest and the base is the thinnest segment.
Choose the most appropriate answer:
(a) Both Statement I and Statement II are correct
(b) Both Statement I and Statement II are incorrect
(c) Statement I is incorrect but Statement II is correct
(d) Statement I is correct but Statement II is incorrect
Show Answer & Explanation
Answer: (c) Statement I is incorrect but Statement II is correct
Explanation:
1. Statement I is incorrect: the emitter is heavily doped, the base lightly doped and the collector moderately doped.
2. Statement II is correct: the base is very thin and the collector is the largest region (it must dissipate heat).
Teacher's Note:
1. A thin, lightly doped base keeps recombination low.
2. The emitter must supply a large number of carriers.
A. Intrinsic semiconductor
B. n-type semiconductor
C. p-type semiconductor
D. Metals
I. Fermi level near the conduction band
II. Fermi level at the middle (of the gap)
III. Fermi level near the valence band
IV. Fermi level inside the conduction band
(a) A-I, B-II, C-III, D-IV
(b) A-II, B-I, C-III, D-IV
(c) A-II, B-III, C-I, D-IV
(d) A-III, B-I, C-II, D-IV
Show Answer & Explanation
Answer: (b) A-II, B-I, C-III, D-IV
Explanation:
1. Intrinsic: Fermi level in the middle of the gap (II).
2. n-type: electrons are donated, so the Fermi level moves near the conduction band (I).
3. p-type: near the valence band (III).
4. Metals: bands overlap and the Fermi level lies inside the conduction band (IV).
Teacher's Note:
1. The Fermi level moves toward the band that has more carriers.
2. For metals the conduction band is partly filled.
(a) It works as a voltage regulator in reverse bias and behaves like a simple p-n junction diode in forward bias.
(b) It works as a voltage regulator in both forward and reverse bias.
(c) It works as a voltage regulator only in forward bias.
(d) It works as a voltage regulator in forward bias and behaves like a simple p-n junction diode in reverse bias.
Show Answer & Explanation
Answer: (a) It works as a voltage regulator in reverse bias and behaves like a simple p-n junction diode in forward bias.
Explanation:
1. A Zener diode is operated in reverse bias at its breakdown voltage, where the voltage stays almost constant over a wide range of current: this is voltage regulation.
2. In forward bias it conducts like an ordinary p-n junction diode.
Teacher's Note:
1. The breakdown (Zener) voltage is fixed by the doping.
2. A series resistor limits the current.
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