JEE Physics Semiconductor Electronics MCQs Set 04

Practice MCQs for JEE Physics Semiconductor Electronics

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Multiple Choice Questions

Question 1: Consider an npn transistor with its base-emitter junction forward biased and collector-base junction reverse biased. Which of the following statements are true? (1) Electrons cross over from emitter to collector. (2) Holes move from base to collector. (3) Electrons move from emitter to base. (4) Electrons from emitter move out of base without going to collector.
(a) 1, 3
(b) 1, 2
(c) 1, 4
(d) 2, 4
Show Answer & Explanation

Answer: (a) 1, 3

Explanation:
1. In the active region the emitter injects electrons into the base
2. Most of them cross the thin base and are swept into the collector, so statements (1) and (3) are true
3. Holes do not move to the collector, and only a very small fraction of the electrons leave through the base, so (2) and (4) are not true. Answer: (a)

Teacher's Note:
1. In an npn transistor the majority carriers are electrons from the emitter.
2. The base is thin and lightly doped, so almost all electrons reach the collector.

Question 2: In an n-p-n transistor biased in the active region, as the magnitude of the collector-base voltage is increased:
(a) the base current increases because more electrons are injected from the emitter
(b) the base current increases because more holes are injected from the base to the collector
(c) the emitter current decreases because the base-emitter junction gets slightly less forward biased
(d) the collector current increases slightly because the neutral base width reduces
Show Answer & Explanation

Answer: (d) the collector current increases slightly because the neutral base width reduces

Explanation:
1. A larger reverse collector-base voltage widens the collector depletion region
2. This reduces the effective neutral base width (the Early effect)
3. A thinner base means fewer recombinations and a slightly larger collector current. Answer: (d)

Teacher's Note:
1. The Early effect explains the slight slope of the output characteristic in the active region.
2. A narrower base reduces recombination in the base.

Question 3: In the common-emitter configuration, if the transistor is in the active region, then:
(a) \( I_C = \beta I_E \)
(b) \( I_E = \alpha I_B \)
(c) \( I_B = \beta I_C \)
(d) \( I_C = \beta I_B \)
Show Answer & Explanation

Answer: (d) \( I_C = \beta I_B \)

Explanation:
1. Current gain in common-emitter configuration is defined as \( \beta = \frac{I_C}{I_B} \)
2. So \( I_C = \beta I_B \). Answer: (d)

Teacher's Note:
1. Beta is the ratio of collector current to base current.
2. Alpha is the ratio of collector current to emitter current.

Question 4: In a common-base configuration of a transistor, \( \alpha = 0.98 \), \( I_B = 0.02 \) mA and the load resistance in the collector circuit is \( R_L = 5\,\mathrm{k\Omega} \). The output voltage across the load is:
(a) 3.2 V
(b) 4.9 V
(c) 5.2 V
(d) 6.2 V
Show Answer & Explanation

Answer: (b) 4.9 V

Explanation:
1. \( I_E = I_B + I_C \) and \( I_C = \alpha I_E \), so \( I_C = \frac{\alpha}{1-\alpha}I_B = 49\times0.02 = 0.98 \) mA
2. \( V = I_C R_L = 0.98\times10^{-3}\times5000 = 4.9 \) V. Answer: (b)

Teacher's Note:
1. Express collector current in terms of base current using alpha.
2. Output voltage across the load is collector current times load resistance.

Question 5: For an npn transistor, the potentials (in volts) of the base, collector and emitter terminals are given in the four cases below. In which case is the transistor operating in the active region? (a) base 2 V, collector 1 V, emitter 0 V; (b) base 2 V, collector 0 V, emitter 1 V; (c) base 1 V, collector 0 V, emitter 2 V; (d) base 1 V, collector 2 V, emitter 0 V.
(a) Base 2 V, collector 1 V, emitter 0 V
(b) Base 2 V, collector 0 V, emitter 1 V
(c) Base 1 V, collector 0 V, emitter 2 V
(d) Base 1 V, collector 2 V, emitter 0 V
Show Answer & Explanation

Answer: (d) Base 1 V, collector 2 V, emitter 0 V

Explanation:
1. Active region: emitter-base junction forward biased and collector-base junction reverse biased
2. Case (a): V_B = 2 V is above V_C = 1 V, so the collector junction is forward biased (saturation)
3. Case (b): both junctions are forward biased (saturation)
4. Case (c): the emitter is above the base, so the emitter junction is reverse biased (cut-off)
5. Case (d): the base is 1 V above the emitter (forward) and the collector at 2 V is above the base (reverse), which is the active region. Answer: (d)

Teacher's Note:
1. For an npn transistor the collector must be at a higher potential than the base for the active region.
2. The base must be a little above the emitter.

Question 6: Two NAND gates are connected so that the output of the first NAND gate (inputs A and B) is joined to both inputs of a second NAND gate whose output is Y. Identify the gate and choose the correct check of the values of A, B and Y:
(a) OR (A = 1, B = 1, Y = 0)
(b) XOR (A = 0, B = 0, Y = 0)
(c) AND (A = 1, B = 1, Y = 1)
(d) NOT (A = 1, B = 1, Y = 1)
Show Answer & Explanation

Answer: (c) AND (A = 1, B = 1, Y = 1)

Explanation:
1. The first gate gives \( \overline{A\cdot B} \)
2. A NAND gate with both inputs joined acts as a NOT gate
3. So \( Y = \overline{\overline{A\cdot B}} = A\cdot B \), which is an AND gate
4. For A = 1, B = 1 the output is Y = 1. Answer: (c)

Teacher's Note:
1. NAND followed by a NOT gives AND.
2. Check with A = 1 and B = 1 to confirm Y = 1.

Question 7: A circuit consists of a point A held at -10 V, a resistor R, and two ideal diodes D1 and D2 in series, joined to a point B that is earthed (0 V). Diode D1 conducts only for current flowing from A towards B, and diode D2 conducts only for current flowing from B towards A. Which statement is correct?
(a) D1 is forward biased and D2 is reverse biased, hence current flows from A to B
(b) D2 is forward biased and D1 is reverse biased, hence no current flows from B to A and vice versa
(c) D1 and D2 are both forward biased, hence current flows from A to B
(d) D1 and D2 are both reverse biased, hence no current flows from A to B and vice versa
Show Answer & Explanation

Answer: (b) D2 is forward biased and D1 is reverse biased, hence no current flows from B to A and vice versa

Explanation:
1. B (0 V) is at a higher potential than A (-10 V), so the driving current would flow from B to A
2. D2 conducts for B to A current, so it is forward biased
3. D1 conducts only for A to B current, so it is reverse biased and blocks the flow
4. With one diode blocking, no current flows in either direction. Answer: (b)

Teacher's Note:
1. Diodes in series must all be forward biased for current to flow.
2. One reverse-biased ideal diode is enough to stop the current.

Question 8: A pn junction diode (germanium) is to be used with a 1.5 V battery in forward bias. A current in excess of 10 mA damages the diode. What value of resistor should be connected in series with the diode (take the forward voltage drop of the germanium diode as 0.3 V) so that the maximum current does not exceed 6 mA?
(a) \( 100\,\Omega \)
(b) \( 200\,\Omega \)
(c) \( 300\,\Omega \)
(d) \( 400\,\Omega \)
Show Answer & Explanation

Answer: (b) \( 200\,\Omega \)

Explanation:
1. Voltage across the resistor \( = 1.5 - 0.3 = 1.2 \) V
2. \( R = \frac{1.2}{6\times10^{-3}} = 200\,\Omega \). Answer: (b)

Teacher's Note:
1. A germanium diode drops about 0.3 V when conducting.
2. Use Ohm's law on the series resistor.

Question 9: A 220 V a.c. supply is connected between points A and B of a circuit in which a diode is joined in series with the source and a capacitor is connected across the output. What will be the steady potential difference V across the capacitor?
(a) 220 V
(b) 110 V
(c) 0 V
(d) \( 220\sqrt2\ \mathrm{V} \)
Show Answer & Explanation

Answer: (d) \( 220\sqrt2\ \mathrm{V} \)

Explanation:
1. The diode charges the capacitor to the peak value of the a.c. voltage
2. 220 V is the rms value, so the peak is \( 220\sqrt2 \approx 311 \) V
3. With no load, the capacitor holds this peak value. Answer: (d)

Teacher's Note:
1. Quoted a.c. voltages are rms values.
2. The capacitor holds the peak value because the diode stops it from discharging back.

Question 10: In the circuit, a 12 V battery is joined in series with a \( 400\,\Omega \) resistor; the other end of this resistor is connected to a parallel combination of a Zener diode (\( V_z = 4 \) V, properly biased) and a second \( 400\,\Omega \) resistor, which leads back to the battery. The power dissipated in the Zener diode is:
(a) 20 mW
(b) 30 mW
(c) 40 mW
(d) 50 mW
Show Answer & Explanation

Answer: (c) 40 mW

Explanation:
1. The voltage across the parallel combination is fixed at 4 V
2. Current through the series resistor \( I_1 = \frac{12-4}{400} = 20 \) mA
3. Current through the other resistor \( I_3 = \frac{4}{400} = 10 \) mA
4. Current through the Zener \( I_2 = 20 - 10 = 10 \) mA
5. Power \( = V_z I_2 = 4\times10\times10^{-3} = 40 \) mW. Answer: (c)

Teacher's Note:
1. The Zener keeps the voltage across it at 4 V.
2. Use Kirchhoff's current law to find the Zener current.

Question 11: Which part of the I-V characteristic of a zener diode is most relevant for its operation as a voltage regulator?
(a) the forward-bias region
(b) the small reverse leakage current region before breakdown
(c) the region around zero voltage and zero current
(d) the reverse breakdown region, where the voltage stays nearly constant for a large change in current
Show Answer & Explanation

Answer: (d) the reverse breakdown region, where the voltage stays nearly constant for a large change in current

Explanation:
1. A voltage regulator needs a nearly constant voltage across the load while the current changes
2. In the reverse breakdown region of a Zener diode the voltage remains almost constant although the current varies widely
3. So this region is used for regulation. Answer: (d)

Teacher's Note:
1. Zener diodes are operated in reverse bias at breakdown.
2. The steep, almost vertical part of the curve gives the constant voltage.

Question 12: For diode D₁ the forward bias resistance is \( 20\,\Omega \) and the reverse bias resistance is \( 600\,\Omega \). For diode D₂ the forward bias resistance is \( 30\,\Omega \) and the reverse bias resistance is \( 200\,\Omega \). The two diodes are connected in parallel between A and B in opposite directions (D₁ conducts from A to B and D₂ conducts from B to A). Find the equivalent resistance between A and B if (i) A is at a higher potential, (ii) B is at a higher potential.
(a) \( \frac{200}{7}\,\Omega \) and \( \frac{200}{11}\,\Omega \)
(b) \( \frac{200}{11}\,\Omega \) and \( \frac{200}{7}\,\Omega \)
(c) \( 50\,\Omega \) and \( 800\,\Omega \)
(d) \( 220\,\Omega \) and \( 630\,\Omega \)
Show Answer & Explanation

Answer: (b) \( \frac{200}{11}\,\Omega \) and \( \frac{200}{7}\,\Omega \)

Explanation:
1. (i) A higher: D₁ is forward (20) and D₂ is reverse (200) in parallel: \( R = \frac{20\times200}{220} = \frac{200}{11}\,\Omega \)
2. (ii) B higher: D₁ is reverse (600) and D₂ is forward (30) in parallel: \( R = \frac{600\times30}{630} = \frac{200}{7}\,\Omega \). Answer: (b)

Teacher's Note:
1. Decide which diode conducts for each polarity, then combine the two resistances in parallel.
2. A forward diode has the small resistance.

Question 13: A Zener diode (\( V_z = 10 \) V) is connected in parallel with a load \( R_L = 2\,\mathrm{k\Omega} \), and this combination is connected to a 60 V battery through a series resistor of \( 4\,\mathrm{k\Omega} \). The currents I (from the battery), \( I_Z \) (through the Zener) and \( I_L \) (through the load) are respectively:
(a) 15 mA, 7.5 mA, 7.5 mA
(b) 12.5 mA, 5 mA, 7.5 mA
(c) 15 mA, 5 mA, 10 mA
(d) 12.5 mA, 7.5 mA, 5 mA
Show Answer & Explanation

Answer: (d) 12.5 mA, 7.5 mA, 5 mA

Explanation:
1. The Zener holds the load at 10 V
2. \( I = \frac{60-10}{4\,\mathrm{k\Omega}} = 12.5 \) mA
3. \( I_L = \frac{10}{2\,\mathrm{k\Omega}} = 5 \) mA
4. \( I_Z = I - I_L = 7.5 \) mA. Answer: (d)

Teacher's Note:
1. The voltage across the load equals the Zener voltage.
2. The current splits between the Zener and the load.

Multiple Choice Questions (MCQs) for JEE Physics Semiconductor Electronics

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