Revision Notes for JEE Chemistry: Solid State
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Classification of Solids
Solids keep a fixed shape and volume because their particles vibrate about fixed positions and are held by strong forces. They are first split by the order in the arrangement of particles, and then by the kind of force that holds the particles together.
| Property | Crystalline solid | Amorphous solid |
|---|---|---|
| Arrangement | Long-range regular repeating pattern | Only short-range order, random beyond that |
| Melting | Sharp melting point and fixed enthalpy of fusion | Melts over a range of temperature |
| Physical properties | Anisotropic (value depends on direction) | Isotropic (same in all directions) |
| Formation | Slow cooling of the melt | Rapid cooling of the melt |
| Examples | NaCl, quartz, diamond, sugar, metals | Glass, rubber, plastics, amorphous silica |
Amorphous solids are also called pseudo solids or super-cooled liquids. One substance can crystallise in different forms depending on conditions; this is polymorphism.
| Type | Particles | Binding force | Properties | Examples |
|---|---|---|---|---|
| Molecular | Molecules | Dispersion, dipole-dipole or hydrogen bonds | Soft, low melting point, insulators | Solid CO2, I2, ice, sulphur S8 |
| Ionic | Ions | Electrostatic attraction | Hard, brittle, high melting point; conduct only when molten or dissolved | NaCl, ZnS, CsCl, CaF2 |
| Metallic | Metal ions in a sea of electrons | Metallic bond | Malleable, conduct when solid | Cu, Fe, Al |
| Covalent (network) | Atoms | Covalent bonds throughout | Very hard, very high melting point, insulators (graphite conducts) | Diamond, SiC, SiO2, AlN |
Unit Cell and Crystal Systems
A lattice is the regular three-dimensional array of points representing the constituent particles. The unit cell is the smallest block that, repeated in all directions without rotation, builds the whole lattice. It is described by six parameters: the edges a, b, c and the angles alpha, beta, gamma. A primitive cell has points only at corners; a centred cell has extra points inside (body-centred), on faces (face-centred) or on a pair of opposite faces (end-centred).
| Crystal system | Edges | Angles | Bravais lattices |
|---|---|---|---|
| Cubic | a = b = c | 90, 90, 90 | Primitive, body-centred, face-centred (3) |
| Tetragonal | a = b not equal c | 90, 90, 90 | Primitive, body-centred (2) |
| Orthorhombic | a, b, c all unequal | 90, 90, 90 | Primitive, body, face, end-centred (4) |
| Monoclinic | a, b, c all unequal | alpha = gamma = 90, beta not 90 | Primitive, end-centred (2) |
| Hexagonal | a = b not equal c | 90, 90, 120 | Primitive (1) |
| Rhombohedral | a = b = c | alpha = beta = gamma not 90 | Primitive (1) |
| Triclinic | a, b, c all unequal | all unequal, none 90 | Primitive (1) |
Together there are 14 Bravais lattices. The contribution of a lattice point to one cube is 1/8 for a corner, 1/4 for an edge centre, 1/2 for a face centre and 1 for the body centre.
| Cubic cell | Atoms per cell Z | Coordination number | Contact along | Edge a in terms of r | Packing efficiency |
|---|---|---|---|---|---|
| Simple cubic | 1 | 6 | edge | a = 2r | 52.4% |
| Body-centred | 2 | 8 | body diagonal | a = 4r / root 3 | 68% |
| Face-centred | 4 | 12 | face diagonal | a = 2 root 2 r | 74% |
Density of a Cubic Crystal
The mass of one unit cell is \( Z\times M/N_A \) and its volume is \( a^3 \), so
\[ \rho=\dfrac{Z\,M}{N_A\,a^3} \]
Use a in cm and M in g/mol to get g/cm\(^3\). Nearest-neighbour distances are a (simple cubic), \( \sqrt{3}a/2 \) (bcc) and \( a/\sqrt{2} \) (fcc).
Close Packing
Spheres in a plane touch six others in the closest 2D packing (hexagonal). A second layer sits over half the hollows of the first. The third layer can then go over the hollows that lie above the first layer (ABAB..., hexagonal close packing, hcp) or over the remaining hollows (ABCABC..., cubic close packing, ccp or fcc). Both have coordination number 12 and a packing efficiency of 74.05%, i.e. 26% empty space.
For hcp: the cell has 6 atoms, the base has side \( a=2r \), the height is \( c=2\sqrt{2/3}\,a=4\sqrt{2/3}\,r \), and the volume is \( 24\sqrt{2}\,r^3 \). Spacing between adjacent layers is \( \sqrt{8/3}\,r \).
Voids in Close Packing
Between close-packed spheres there are two kinds of hole. For N spheres there are N octahedral voids (six neighbours) and 2N tetrahedral voids (four neighbours). A void is characterised by the largest sphere that fits, expressed as a radius ratio \( r_{void}/r_{sphere} \).
| Void | Coordination number | Radius ratio range | Ratio for the ideal void |
|---|---|---|---|
| Triangular | 3 | 0.155 - 0.225 | 0.155 |
| Tetrahedral | 4 | 0.225 - 0.414 | 0.225 |
| Octahedral | 6 | 0.414 - 0.732 | 0.414 |
| Cubic | 8 | 0.732 - 1.000 | 0.732 |
In an fcc cell there are 4 octahedral voids (body centre plus the 12 edge centres, each shared by 4 cells) and 8 tetrahedral voids (inside the cell). In hcp there are 6 octahedral and 12 tetrahedral voids per cell.
Ionic Structures
In ionic crystals the larger ion (usually the anion) forms the lattice and the smaller ion fills a void. The radius ratio \( r_+/r_- \) predicts the coordination number: below 0.225 gives 3, up to 0.414 gives 4, up to 0.732 gives 6 and above that 8.
| Structure | Lattice and filling | Coordination (cation : anion) | Formula units per cell | Examples |
|---|---|---|---|---|
| Rock salt (NaCl) | Anions fcc, cations in all octahedral voids | 6 : 6 | 4 | NaCl, KBr, MgO, AgCl |
| Zinc blende (ZnS) | S fcc, Zn in half the tetrahedral voids | 4 : 4 | 4 | ZnS, CuCl, AgI |
| Fluorite (CaF2) | Ca fcc, F in all tetrahedral voids | 8 : 4 | 4 | CaF2, SrCl2, BaCl2 |
| Antifluorite (Na2O) | O fcc, Na in all tetrahedral voids | 4 : 8 | 4 | Li2O, Na2O, K2O |
| Caesium chloride | One ion at corners, the other at the body centre | 8 : 8 | 1 | CsCl, CsBr, CsI |
| Spinel (AB2O4) | O fcc, A in 1/8 tetrahedral, B in 1/2 octahedral voids | - | 8 | MgAl2O4, Fe3O4 |
Higher pressure increases the coordination number (NaCl type changes to CsCl type, for example); higher temperature has the opposite tendency. In NaCl the edge is \( a=2(r_++r_-) \); in CsCl the body diagonal gives \( \sqrt{3}a=2(r_++r_-) \).
Worked Examples
Example 1. Copper is fcc with a = 3.61 Å. Z = 4, so \( \rho=\dfrac{4\times63.5}{6.022\times10^{23}\times(3.61\times10^{-8})^3}=8.96 \) g/cm\(^3\). Radius \( =a/(2\sqrt{2})=1.276 \) Å.
Example 2. Potassium is bcc with a = 5.2 Å. Z = 2, so \( \rho=\dfrac{2\times39.1}{6.022\times10^{23}\times(5.2\times10^{-8})^3}=0.92 \) g/cm\(^3\). Radius \( =\sqrt{3}a/4=2.25 \) Å.
Example 3. In a crystal the B atoms are in a ccp lattice and the A atoms occupy half of the octahedral voids. Per 4 B atoms there are 4 octahedral voids, so 2 A atoms are present and the formula is AB2.
Example 4. FeO is found as \( \ce{Fe_{0.93}O} \). Let x be the fraction of iron present as Fe(III). Charge balance: \( 3x+2(0.93-x)=2 \), so \( x=0.14 \), and the percentage of Fe(III) in total iron is \( 0.14/0.93=15.05\% \).
Imperfections in Solids
| Defect | Description | Effect on density | Typical compounds |
|---|---|---|---|
| Schottky | Equal numbers of cations and anions missing | Decreases | NaCl, KCl, CsCl, AgBr |
| Frenkel | Smaller ion displaced to an interstitial site | Unchanged | AgCl, AgBr, AgI, ZnS |
| Interstitial | Extra atoms in voids | Increases | Hydrides in metals |
| Metal excess (F-centres) | Anion vacancies hold trapped electrons; interstitial cations with electrons | - | NaCl (yellow), KCl (violet), LiCl (pink), ZnO (yellow) |
| Metal deficiency | Cation vacancy with a neighbouring cation in higher oxidation state | - | FeO, FeS, NiO |
Schottky and Frenkel defects are stoichiometric; metal-excess and metal-deficiency defects change the formula ratio. Doping a crystal of a divalent impurity such as CdCl2 into AgCl creates cation vacancies equal to the number of Cd2+ ions added.
Electrical and Magnetic Properties
Conductors have conductivity about 10 to the power 7 ohm-1 m-1, insulators 10 to the power -20 to -10 and semiconductors in between. In metals the conduction band overlaps the valence band; in semiconductors the gap is small; in insulators it is large. Semiconductor conductivity rises with temperature while a metal's falls.
| Type | Dopant | Majority carrier |
|---|---|---|
| n-type (silicon or germanium) | Group 15 element (P, As) | Extra electrons |
| p-type (silicon or germanium) | Group 13 element (B, Al, Ga) | Holes |
Both are electrically neutral. Compounds of groups 13-15 (GaAs) and 12-16 (ZnS, CdS) are also semiconductors.
| Magnetic behaviour | Cause | Example |
|---|---|---|
| Diamagnetic | All electrons paired; weakly repelled | NaCl, benzene, H2O |
| Paramagnetic | Unpaired electrons; attracted | O2, Cu2+, Fe3+ |
| Ferromagnetic | Domains aligned in the same direction, permanent magnetism, lost above the Curie temperature | Fe, Co, Ni, CrO2 |
| Antiferromagnetic | Domains aligned in opposite directions, net moment zero | MnO |
| Ferrimagnetic | Domains aligned in opposite directions but unequal, small net moment | Fe3O4, ferrites |
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