CBSE Class 12 Physics Semiconductor Electronics Materials Devices and Simple Circuits MCQs

Refer to CBSE Class 12 Physics Semiconductor Electronics Materials Devices and Simple Circuits MCQs provided below. CBSE Class 12 Physics MCQs with answers available in Pdf for free download. The MCQ Questions for Class 12 Physics with answers have been prepared as per the latest syllabus, CBSE books and examination pattern suggested in Class 12 by CBSE, NCERT and KVS. Multiple Choice Questions for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits are an important part of exams for Class 12 Physics and if practiced properly can help you to get higher marks. Refer to more Chapter-wise MCQs for CBSE Class 12 Physics and also download more latest study material for all subjects

MCQ for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

Class 12 Physics students should refer to the following multiple-choice questions with answers for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits in Class 12. These MCQ questions with answers for Class 12 Physics will come in exams and help you to score good marks

Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits MCQ Questions Class 12 Physics with Answers

Question : The transistor are usually made of 
(a) metal oxides with high temperature coefficient of resistivity
(b) metals with high temperature coefficient of resistivity
(c) metals with low temperature coefficient of resistivity
(d) semiconducting materials having low temperature coefficient of resistivity
Answer: A


Question :   To use a transistor as an amplifier, emitter-base junction is kept in ...X... and base-collector junction is kept in ...Y... Here, X and Y refer to
(a) forward bias, forward bias
(b) reverse bias, reverse bias
(c) reverse bias, forward bias
(d) forward bias, reverse bias
AnswerD


Question : A transistor has three impurity regions. All the three regions have different doping levels. In order of increasing doping level, the regions are
(a) emitter, base and collector
(b) collector, base and emitter
(c) base, emitter and collector
(d) base, collector and emitter
AnswerD


Question : When npn transistor is used as an amplifier
(a) electrons move from collector to base
(b) holes move from emitter to base
(c) electrons move from base to collector
(d) holes move from base to emitter
AnswerD


Question : For a common base amplifier, the values of resistance gain and voltage gain are 3000 and 2800 respectively. The current gain will be
(a) 1.1
(b) 0.98
(c) 0.93
(d) 0.83
AnswerC


Question : The current gain of a transistor in common base mode is 0.995. The current gain of the same transistor in common emitter mode is
(a) 197
(b) 201
(c) 198
(d) 199
AnswerD

 

Question : In Boolean algebra, Y = A + B implies that
(a) output Y exists when both inputs A and B exist
(b) output Y exists when either input A exists or input B exists or both inputs A and B exist
(c) output Y exists when either input A exists or input B exists but not when both inputs A and B exist
(d) output Y exists when both inputs A and B exists but not when either input A or B exist
AnswerA


Question : NAND and NOR gates are called universal gates primarily because they
(a) are available universally
(b) can be combined to produce OR, AND and NOT gates
(c) are widely used in Integrated circuit packages
(d) are easiest to manufacture
AnswerB 


Question : The gate for which output is high if atleast one input is low?
(a) NAND
(b) NOR
(c) AND
(d) OR
AnswerD 

 

Question : Hole in semiconductor is
(a) an anti – particle of electron
(b) a vacancy created when an electron leaves a covalent bond
(c) absence of free electrons
(d) an artificially created particle
AnswerD


Question : In a semiconductor
(a) there are no free electrons at 0 K
(b) there are no free electrons at any temperature
(c) the number of free electrons increases with pressure
(d) the number of fre electrons is more than that in a conductor
Answer: A
 
Question : Let nh and ne be the number of holes and conduction electrons in an extrinsic semiconductor. Then
(a) nh > ne 
(b) nh = ne 
(c) nh < ne
(d) nh ≠ ne
Answer: D
 
Question :  A p-type semiconductor is
(a) positively charged
(b) negatively charged
(c) uncharged
(d) uncharged at 0K but charged at higher temperatures
Answer: C
 
Question : Electric conduction in a semiconductor takes place due to
(a) electrons only
(b) holes only
(c) both electrons and holes
(d) neither electrons nor holes
Answer: C
 
Question : The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of
(a) phosphorus 
(b) boron
(c) antimony 
(d) nitrogen
Answer: B
 
Question : The electrical conductivity of pure germanium can be increased by
(a) increasing the temperature
(b) doping acceptor impurities
(c) doping donor impurities
(d) All of the above
Answer: D
 
Question : The resistivity of a semiconductor at room temperature is in between
(a) 10–2 to 10–5 Ω cm 
(b) 10–3 to 106 Ω cm
(c) 106 to 108 Ω cm 
(d) 1010 to 1012 Ω cm
Answer: B
 
Question : Number of electrons in the valence shell of a pure semiconductor is
(a) 1 
(b) 2 
(c) 3 
(d) 4
Answer: D
 
Question : In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order is
(a) 1 MeV 
(b) 0.1 Mev
(c) 1 eV 
(d) 5 eV
Answer: C
 
Question : The forbidden energy gap for germanium crystal at 0 K is
(a) 0.071 eV 
(b) 0.71 eV
(c) 2.57 eV 
(d) 6.57 eV
Answer: B
 
Question : In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
(a) 1 MeV 
(b) 0.1 MeV
(c) 1 eV 
(d) 5 eV
Answer: D
 
Question : What is the resistivity of a pure semiconductor at absolute zero ?
(a) Zero
(b) Infinity
(c) Same as that of conductors at room temperature
(d) Same as that of insulators at room temperature
Answer: B
 
Question : Temperature coefficient of resistance of semiconductor is
(a) zero 
(b) constant
(c) positive 
(d) negative
Answer: D
 
Question : In a p-type semiconductor, the acceptor valence band is
(a) close to the valence band of the host crystal
(b) close to conduction band of the host crystal
(c) below the conduction band of the host crystal
(d) above the conduction band of the host crystal
Answer: A
 
Question : In an n-type semiconductor, donor valence band is
(a) above the conduction band of the host crystal
(b) close to the valence band of the host crystal
(c) close to the conduction band of the host crystal
(d) below the valence band of the host crystal
Answer: C
 
Question : The mobility of free electrons is greater than that of free holes because
(a) they are light
(b) they carry negative charge
(c) they mutually colllide less
(d) they require low energy to continue their motion
Answer: A
 
Question : The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by
(a) n ∝T 
(b) n ∝ T2
(c) n ∝ √T 
(d) n ∝T3/2
Answer: D
 
Question : In semiconductors, at room temperature
(a) the conduction band is completely empty
(b) the valence band is partially empty and the conduction band is partially filled
(c) the valence band is completely filled and the conduction band is partially filled
(d) the valence band is completely filled
Answer: C
 
Question : At absolute zero, Si acts as
(a) non-metal 
(b) metal
(c) insulator 
(d) None of these
Answer: C
 
Question : One serious drawback of semi-conductor devices is
(a) they do not last for long time.
(b) they are costly
(c) they cannot be used with high voltage.
(d) they pollute the environment.
Answer: C
 
Question : When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor
(a) increases 
(b) decreases
(c) remains the same 
(d) becomes zero
Answer: A
 
Question : An electric field is applied to a semiconductor. Let the number of charge carriers be n and the average drift speed be v. If the temperature is increased
(a) both n and v will increase
(b) n will increase but v will decrease
(c) v will increase but n will decrease
(d) both n and v will decrease
Answer: A
 
Question : If a small amount of antimony is added to germanium crystal
(a) it becomes a p–type semiconductor
(b) the antimony becomes an acceptor atom
(c) there will be more free electrons than holes in the semiconductor
(d) its resistance is increased
Answer: C
 
Question : By increasing the temperature, the specific resistance of a conductor and a semiconductor
(a) increases for both 
(b) decreases for both
(c) increases, decreases 
(d) decreases, increases
Answer: C
 
Question : A strip of copper and another of germanium are cooled from room temperature to 80K. The resistance of
(a) each of these decreases
(b) copper strip increases and that of germanium decreases
(c) copper strip decreases and that of germanium increases
(d) each of these increases
Answer: C
 
Question : Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationship is true in their case?
(a) (Eg)C > (Eg)Si 
(b) (Eg)C < (Eg)Si
(c) (Eg)C = (Eg)Si 
(d) (Eg)C < (Eg)Ge
Answer: A
 
Question : A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be a/an
(a) intrinsic semiconductor
(b) p-type semiconductor
(c) n-type semiconductor
(d) p-n junction diode
Answer: D
 
Question : If the two ends of a p-n junction are joined by a wire
(a) there will not be a steady current in the circuit
(b) there will be a steady current from the n-side to the pside
(c) there will be a steady current from the p-side to the nside
(d) there may or may not be a current depending upon the resistance of the connecting wire
Answer: A
 
Question : The drift current in a p-n junction is from the
(a) n-side to the p-side
(b) p-side to the n-side
(c) n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse biased
(d) p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
Answer: A
 
Question : The diffusion current in a p-n junction is from the
(a) n-side to the p-side
(b) p-side to the n-side
(c) n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
(d) p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
Answer: B
 
Question : Diffusion current in a p-n junction is greater than the drift current in magnitude
(a) if the junction is forward-biased
(b) if the junction is reverse-biased
(c) if the junction is unbiased
(d) in no case
Answer: A
 
Question : Forward biasing is that in which applied voltage
(a) increases potential barrier
(b) cancels the potential barrier
(c) is equal to 1.5 volt
(d) None of these
Answer: B
 
Question : In V-I characteristic of a p-n junction, reverse biasing results in
(a) leakage current
(b) the current barrier across junction increases
(c) no flow of current
(d) large current
Answer: A
 
Question : In reverse biasing
(a) large amount of current flows
(b) potential barrier across junction increases
(c) depletion layer resistance increases
(d) no current flows
Answer: B
 
Question : Zener diode is used for
(a) amplification 
(b) rectification
(c) stabilisation 
(d) all of the above
Answer: C
 
Question : Filter circuit
(a) eliminates a.c. component
(b) eliminates d.c. component
(c) does not eliminate a.c. component
(d) None of these
Answer: A
 
Question : In a transistor
(a) the emitter has the least concentration of impurity
(b) the collector has the least concentration of impurity
(c) the base has the least concentration of impurity
(d) all the three regions have equal concentrations of impurity
Answer: C
 
Question : In a semiconductor diode, the barrier potential offers opposition to
(a) holes in P-region only
(b) free electrons in N-region only
(c) majority carriers in both regions
(d) majority as well as minority carriers in both regions
Answer: C
 
Question : In a P -N junction
(a) the potential of P & N sides becomes higher alternately
(b) the P side is at higher electrical potential than N side.
(c) the N side is at higher electric potential than P side.
(d) both P & N sides are at same potential.
Answer: B
 
Question : Barrier potential of a P-N junction diode does not depend on
(a) doping density 
(b) diode design
(c) temperature 
(d) forward bias
Answer: B
 
Question : Reverse bias applied to a junction diode
(a) increases the minority carrier current
(b) lowers the potential barrier
(c) raises the potential barrier
(d) increases the majority carrier current
Answer: C
 
Question : In forward biasing of the p–n junction
(a) the positive terminal of the battery is connected to p–side and the depletion region becomes thick
(b) the positive terminal of the battery is connected to n–side and the depletion region becomes thin
(c) the positive terminal of the battery is connected to n–side and the depletion region becomes thick
(d) the positive terminal of the battery is connected to p–side and the depletion region becomes thin
Answer: D
 
Question : When p-n junction diode is forward biased then
(a) both the depletion region and barrier height are reduced
(b) the depletion region is widened and barrier height is reduced
(c) the depletion region is reduced and barrier height is increased
(d) Both the depletion region and barrier height are increased
Answer: A
 
Question : The cause of the potential barrier in a p-n junction diode is
(a) depletion of positive charges near the junction
(b) concentration of positive charges near the junction
(c) depletion of negative charges near the junction
(d) concentration of positive and negative charges near the junction
Answer: D
 
Question : The ratio of forward biased to reverse biased resistance for pn junction diode is
(a) 10–1 : 1 
(b) 10–2 : 1
(c) 104 : 1 
(d) 10–4 : 1
Answer: D
 
Question : In the middle of the depletion layer of a reverse- biased on junction, the
(a) electric field is zero 
(b) potential is maximum
(c) electric field is maximum
(d) potential is zero
Answer: C
 
Question : Bridge type rectifier uses
(a) four diodes 
(b) six diodes
(c) two diodes 
(d) one diode
Answer: A
 
Question : The average value of output direct current in a half wave rectifier is
(a) I0/π 
(b) I0/2
(c) π I0/2
(d) 2 I0/π
Answer: A
 
Question : The average value of output direct current in a full wave rectifier is
(a) I0/π 
(b) I0/2
(c) π I0/2
(d) 2 I0/π
Answer: A
 
Question : In a half wave rectifier, the r.m.s. value of the a.c. component of the wave is
(a) equal to d.c. value 
(b) more than d.c. value
(c) less than d.c. value 
(d) zero
Answer: B

Question : In a semiconductor
(a) there are no free electrons at 0 K
(b) there are no free electrons at any temperature
(c) the number of free electrons increases with pressure
(d) the number of fre electrons is more than that in a conductor
Answer : A

Question : The electrical conductivity of pure germanium can be increased by
(a) increasing the temperature
(b) doping acceptor impurities
(c) doping donor impurities
(d) All of the above
Answer : D

Question : Electric conduction in a semiconductor takes place due to
(a) electrons only
(b) holes only
(c) both electrons and holes
(d) neither electrons nor holes
Answer : C

Question :  The drift current in a p-n junction is from the
(a) n-side to the p-side
(b) p-side to the n-side
(c) n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse biased
(d) p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
Answer : A

Question : If a small amount of antimony is added to germanium crystal
(a) it becomes a p–type semiconductor
(b) the antimony becomes an acceptor atom
(c) there will be more free electrons than holes in the semiconductor
(d) its resistance is increased
Answer : C

Question :  The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10V. The d.c. component of the output voltage is
(a) 20/p V
(b) 10/Ö2 V
(c) 10/p V
(d) 10V
Answer : C

Question : In the half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be
(a) 25 Hz
(b) 50 Hz
(c) 70.7 Hz
(d) 100 Hz
Answer : B

Question : If the forward bias on p-n junction is increased from zero to 0.045 V, then no current flows in the circuit. The contact potential of junction i.e. VB is
(a) zero                   
(b) 0.045 V
(c) more than 0.045 V
(d) less than 0.045 V
Answer : C

Question : Choose the correct option
Assertion : A pure semiconductor has negative temperature coefficient of resistance.
Reason : In a semiconductor on raising the temperature, more charge carriers are released, conductance increases and resistance decreases.
(a) Assertion is correct, reason is correct; reason is a correct explanation for assertion.
(b) Assertion is correct, reason is correct; reason is not a correct explanation for assertion
(c) Assertion is correct, reason is incorrect
(d) Assertion is incorrect, reason is correct.
Answer : A

Question : An electric field is applied to a semiconductor. Let the number of charge carriers be n and the average drift speed be v. If the temperature is increased
(a) both n and v will increase
(b) n will increase but v will decrease
(c) v will increase but n will decrease
(d) both n and v will decrease
Answer : A

Chapter 01 Electric Charges and Fields
CBSE Class 12 Physics Electric Charges and Fields MCQs
Chapter 02 Electrostatic Potential and Capacitance
CBSE Class 12 Physics Electrostatic Potential and Capacitance MCQs
Chapter 03 Current Electricity
CBSE Class 12 Physics Current Electricity MCQs
Chapter 04 Moving Charges and Magnetism
CBSE Class 12 Physics Moving Charges and Magnetism MCQs
Chapter 05 Magnetism and Matter
CBSE Class 12 Physics Magnetism and Matter MCQs
Chapter 06 Electromagnetic Induction
CBSE Class 12 Physics Electromagnetic Induction MCQs
Chapter 07 Alternating Current
CBSE Class 12 Physics Alternating Current MCQs
Chapter 09 Ray Optics and Optical Instruments
CBSE Class 12 Physics Ray Optics and Optical Instruments MCQs
Chapter 11 Dual Nature of Radiation and Matter
CBSE Class 12 Physics Dual Nature of Radiation and Matter MCQs
Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits
CBSE Class 12 Physics Semiconductor Electronics Materials Devices and Simple Circuits MCQs
Chapter 15 Communication Systems
CBSE Class 12 Physics Communication Systems MCQs

More Study Material

CBSE Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits MCQs

We hope students liked the above MCQs for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits designed as per the latest syllabus for Class 12 Physics released by CBSE. Students of Class 12 should download the Multiple Choice Questions and Answers in Pdf format and practice the questions and solutions given in above Class 12 Physics MCQs Questions on daily basis. All latest MCQs with answers have been developed for Physics by referring to the most important and regularly asked topics which the students should learn and practice to get better score in school tests and examinations. Studiestoday is the best portal for Class 12 students to get all latest study material free of cost.

MCQs for Physics CBSE Class 12 Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

Expert teachers of studiestoday have referred to NCERT book for Class 12 Physics to develop the Physics Class 12 MCQs. If you download MCQs with answers for the above chapter daily, you will get higher and better marks in Class 12 test and exams in the current year as you will be able to have stronger understanding of all concepts. Daily Multiple Choice Questions practice of Physics and its study material will help students to have stronger understanding of all concepts and also make them expert on all critical topics. You can easily download and save all MCQs for Class 12 Physics also from www.studiestoday.com without paying anything in Pdf format. After solving the questions given in the MCQs which have been developed as per latest course books also refer to the NCERT solutions for Class 12 Physics designed by our teachers

Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits MCQs Physics CBSE Class 12

All MCQs given above for Class 12 Physics have been made as per the latest syllabus and books issued for the current academic year. The students of Class 12 can refer to the answers which have been also provided by our teachers for all MCQs of Physics so that you are able to solve the questions and then compare your answers with the solutions provided by us. We have also provided lot of MCQ questions for Class 12 Physics so that you can solve questions relating to all topics given in each chapter. All study material for Class 12 Physics students have been given on studiestoday.

Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits CBSE Class 12 MCQs Physics

Regular MCQs practice helps to gain more practice in solving questions to obtain a more comprehensive understanding of Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits concepts. MCQs play an important role in developing understanding of Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits in CBSE Class 12. Students can download and save or print all the MCQs, printable assignments, practice sheets of the above chapter in Class 12 Physics in Pdf format from studiestoday. You can print or read them online on your computer or mobile or any other device. After solving these you should also refer to Class 12 Physics MCQ Test for the same chapter

CBSE MCQs Physics Class 12 Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

CBSE Class 12 Physics best textbooks have been used for writing the problems given in the above MCQs. If you have tests coming up then you should revise all concepts relating to Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits and then take out print of the above MCQs and attempt all problems. We have also provided a lot of other MCQs for Class 12 Physics which you can use to further make yourself better in Physics

Where can I download latest CBSE MCQs for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

You can download the CBSE MCQs for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits for latest session from StudiesToday.com

Can I download the MCQs of Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Class 12 Physics in Pdf

Yes, you can click on the links above and download topic wise MCQs Questions PDFs for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Class 12 for Physics

Are the Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits MCQs available for the latest session

Yes, the MCQs issued by CBSE for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits have been made available here for latest academic session

How can I download the Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Class 12 Physics MCQs

You can easily access the links above and download the Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Class 12 MCQs Physics for each topic

Is there any charge for the MCQs with answers for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

There is no charge for the MCQs and their answers for Class 12 CBSE Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits you can download everything free

How can I improve my MCQs in Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

Regular revision of MCQs given on studiestoday for Class 12 subject Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits can help you to score better marks in exams

What are MCQs for Class 12 Physics Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits

Multiple Choice Questions (MCQs) for Chapter 14 Semiconductor Electronics Materials Devices and Simple Circuits Class 12 Physics are objective-based questions which provide multiple answer options, and students are required to choose the correct answer from the given choices.